Honorary Speaker
Opening Remarks
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
Dr. Shuji Nakamura is widely recognized as pioneer in light emitters based on wide-bandgap semiconductors, Nakamura continues to focus on development of GaN thin film technology for the developments of high efficient Nitride-based LEDs and laser diodes.
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
Honorary Guests
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
Dr. Shuji Nakamura is widely recognized as pioneer in light emitters based on wide-bandgap semiconductors, Nakamura continues to focus on development of GaN thin film technology for the developments of high efficient Nitride-based LEDs and laser diodes.
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
External Speakers
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
Dr. Shuji Nakamura is widely recognized as pioneer in light emitters based on wide-bandgap semiconductors, Nakamura continues to focus on development of GaN thin film technology for the developments of high efficient Nitride-based LEDs and laser diodes.
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
KAUST Speakers
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara
Dr. Shuji Nakamura is widely recognized as pioneer in light emitters based on wide-bandgap semiconductors, Nakamura continues to focus on development of GaN thin film technology for the developments of high efficient Nitride-based LEDs and laser diodes.
Nobel Laureate, US NAE, CREE Distinguished Professor, UC Santa Barbara