Professor Lanza's research focuses on the integration of two-dimensional (2D) materials in solid-state nano/micro-electronic devices and circuits, with special emphasis on memristive crossbar arrays and their use to build artificial neural networks. He puts special effort on using fabrication methods compatible with the industry, and to characterize the yield and variability of large amounts of devices in a statistical manner. He is one of the world leaders on the study of hexagonal boron nitride (h-BN), as well as many other ultra-thin dielectrics for electronic devices (SiO2, HfO2, Al2O3). He is famous for his expertise on nanoelectronic characterization of multiple materials and devices using scanning probe microscopy (SPM).
Associate Professor, Material Science and Engineering
Professor of Semiconductors Physics, KACST
Director, Max Planck Institute
Chair Professor of Future Electronics, University of Hong Kong
Professor of Material Science and Engineering, KAUST
Center of Excellence for Green Nanotechnologies, KACST
Associate Professor, Material Science and Engineering
NA and AFM Distribution Manager, Oxford Instruments